Finwave
Founded 2012 · 30 employees on LinkedIn · 10 known investors
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Finwave Semiconductor develops GaN-on-Silicon RF technology and devices, including E-mode GaN power amplifiers and high-power broadband RF switches for radio front-end applications. Its products target 5G, 6G, and aerospace/defense communication systems, serving device designers and engineers who need higher power handling, frequency, and energy efficiency.
Also known as Finwave Semiconductor
Founders & leadership
Finwave was founded in 2012 by Tomas Palacios.
Investors · 10
Company profile
researched Aug 2026Finwave Semiconductor is a semiconductor company developing gallium nitride (GaN) on silicon technology and devices for radio frequency (RF) front-ends. Its initial product focus covers two RF front-end functions: enhancement-mode (E-mode) GaN power amplifiers and high-power broadband RF switches, both of which are present in essentially every communication system. The company positions GaN-on-Si as a successor to legacy GaAs HBT and pHEMT technologies, which it describes as limited in scaling performance at higher power levels and frequencies as demands from 5G, 5G Advanced, 6G and beyond increase.
The company's stated approach applies transistor scaling concepts, including FinFET-style device architecture, to RF GaN. Finwave describes a patented method for linearizing both power amplifiers and low-noise amplifiers at the device level, achieved by reducing memory effects from electron trapping and by a device-level power combining approach. It states that the resulting high intrinsic linearity improves power amplifier efficiency at the backoff conditions required by high-order modulation schemes and permits simpler digital pre-distortion algorithms. Finwave offers evaluation kits and samples, and works with partners internationally to apply the technology across industries.
Latest developments
First Finwave RF products began sampling in 2024, the same year the company announced a major collaboration agreement for E-mode power amplifier technology. In 2025 its GaN-on-Si RF devices were qualified and stocked at a major global distributor. The company has published work on 5V E-mode GaN-on-Si for handset RF front-ends on the GlobalFoundries RFGaN-LV1 platform and announced plans to exhibit at IEEE IMS 2026 in Boston with daily product demonstrations.
▸Full profile — market position, technology, go-to-market, geography
Market position
Finwave positions itself as a supplier of high-performance GaN-on-Silicon RF technology and devices addressing the power and frequency scaling limits of incumbent GaAs HBT and pHEMT RF front-end technologies.
The company differentiates on applying Moore's Law-style scaling and FinFET techniques to RF GaN, and on a patented device-level linearization technique for power amplifiers and low-noise amplifiers that it says delivers higher linearity than conventional technologies, better efficiency at backoff, simplified design, energy savings and lower cost of ownership relative to GaAs HBT and pHEMT-based front-ends.
Technology
Finwave's core technology is GaN-on-Silicon for RF applications, encompassing E-mode GaN power amplifiers, high-power broadband RF switches (including broadband SPDT parts), and FinFET device technology. The company describes a patented device-level linearization approach for PAs and LNAs that reduces electron-trapping memory effects and uses a novel device-level power combining scheme, yielding high intrinsic linearity, improved efficiency at backoff, and simpler digital pre-distortion. Product work includes 5V E-mode GaN-on-Si for handset RF front-ends on the GlobalFoundries RFGaN-LV1 platform.
Go-to-market
Finwave makes evaluation kits and product samples available to prospective customers and invites direct engagement for high-power switch requirements. It collaborates with partners globally, exhibits at industry events such as the IEEE International Microwave Symposium, and its GaN-on-Si RF devices are stocked at a major global distributor.
Finwave targets device designers and engineers building RF front-ends across cellular infrastructure (base stations), handsets, satellites, military and aerospace, test and measurement, medical, and automotive radar and communication systems.
Geography
Finwave states it collaborates with partners globally and participates in industry events in Boston; co-founder Tomas Palacios is an MIT professor.
Compiled by commissioned research from 1 cited public sources — announcements, filings, and press listed under research sources below.
Founder mafia
3 people who came through Finwave went on to found or lead other companies.
Timeline · 4
launches, deals, and filingsFinwave announced it will exhibit at the IEEE International Microwave Symposium in Boston (Booth 17076), with a separate demonstration featured on each day of the show.
Finwave's GaN-on-Silicon RF devices were qualified and made available in stock at a major global distributor.
Finwave announced a major collaboration agreement covering enhancement-mode GaN power amplifier technology.
Finwave's first RF products became available for sampling.
Dated company events from announcements, filings, and press; legal rows summarize public dockets and regulator releases.
In the news
▸Research sources · 1
primary sources listed
- Finwavefinwavesemi.com · web
1 public sources were cited for this profile; the first-party ones are listed here.
Frequently asked questions
- What does Finwave do?
- Finwave Semiconductor develops GaN-on-Silicon RF technology, including E-mode power amplifiers and high-power broadband RF switches.
- Who founded Finwave?
- Finwave was founded by Tomas Palacios in 2012.
- Who are Finwave's investors?
- Finwave's investors include Castor Ventures (an Alumni Ventures Fund), Citta Capital, Fine Structures Ventures, Foothill Ventures, In-Q-Tel, Safar Partners, Strawberry Creek Ventures, The Engine Ventures and 2 more.