Finwave

Market position

Finwave positions itself as a supplier of high-performance GaN-on-Silicon RF technology and devices addressing the power and frequency scaling limits of incumbent GaAs HBT and pHEMT RF front-end technologies.

The company differentiates on applying Moore's Law-style scaling and FinFET techniques to RF GaN, and on a patented device-level linearization technique for power amplifiers and low-noise amplifiers that it says delivers higher linearity than conventional technologies, better efficiency at backoff, simplified design, energy savings and lower cost of ownership relative to GaAs HBT and pHEMT-based front-ends.

Technology

Finwave's core technology is GaN-on-Silicon for RF applications, encompassing E-mode GaN power amplifiers, high-power broadband RF switches (including broadband SPDT parts), and FinFET device technology. The company describes a patented device-level linearization approach for PAs and LNAs that reduces electron-trapping memory effects and uses a novel device-level power combining scheme, yielding high intrinsic linearity, improved efficiency at backoff, and simpler digital pre-distortion. Product work includes 5V E-mode GaN-on-Si for handset RF front-ends on the GlobalFoundries RFGaN-LV1 platform.

Go-to-market

Finwave makes evaluation kits and product samples available to prospective customers and invites direct engagement for high-power switch requirements. It collaborates with partners globally, exhibits at industry events such as the IEEE International Microwave Symposium, and its GaN-on-Si RF devices are stocked at a major global distributor.

Finwave targets device designers and engineers building RF front-ends across cellular infrastructure (base stations), handsets, satellites, military and aerospace, test and measurement, medical, and automotive radar and communication systems.

Geography

Finwave states it collaborates with partners globally and participates in industry events in Boston; co-founder Tomas Palacios is an MIT professor.