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株式会社FLOSFIA

Kyoto, JP · Founded 2011 · 4 known investors

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FLOSFIA develops power semiconductor devices based on corundum-structure gallium oxide (α-Ga₂O₃), a material originating from Kyoto University in Japan, using its proprietary water-based "MISTEPITAXY" mist deposition process to achieve lower loss than SiC at silicon-level cost. It targets applications starting with small power supplies and expanding to industrial equipment, power infrastructure, and mobility including electric vehicles.

Founders & leadership

株式会社FLOSFIA was founded in 2011 by 人羅俊実.

人
人羅俊実創業者・取締役会長 (Founder & Chairman)
四四戸孝
四戸孝代表取締役社長 (President & CEO)
人俊
人羅 俊実創業者 取締役会長
天健
天田 健嗣代表取締役社長

Investors · 4

Frequently asked questions

What does 株式会社FLOSFIA do?
FLOSFIA develops power semiconductor devices based on corundum-structure gallium oxide (α-Ga₂O₃), a material originating from Kyoto University in Japan, using its proprietary water-based "MISTEPITAXY" mist deposition process to achieve lower loss than SiC at silicon-level cost. It targets applications starting with small power supplies and expanding to industrial equipment, power infrastructure, and mobility including electric vehicles.
Who founded 株式会社FLOSFIA?
株式会社FLOSFIA was founded by 人羅俊実 in 2011.
Who are 株式会社FLOSFIA's investors?
株式会社FLOSFIA's investors include Energy & Environment Investment, Kyoto University Innovation Capital, Miyako Capital, UTEC.
Where is 株式会社FLOSFIA headquartered?
株式会社FLOSFIA is headquartered in Kyoto, JP.