株式会社FLOSFIA
Kyoto, JP · 4 known investors
FLOSFIA develops power semiconductor devices based on corundum-structure gallium oxide (α-Ga₂O₃), a material originating from Kyoto University in Japan, using its proprietary water-based "MISTEPITAXY" mist deposition process to achieve lower loss than SiC at silicon-level cost. It targets applications starting with small power supplies and expanding to industrial equipment, power infrastructure, and mobility including electric vehicles.
CleantechDeep TechNew MaterialsSemiconductors
Founders & leadership
四
四戸孝代表取締役社長 (President & CEO)
人
人羅俊実創業者・取締役会長 (Founder & Chairman)