株式会社FLOSFIA
Kyoto, JP · Founded 2011 · 4 known investors
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FLOSFIA develops power semiconductor devices based on corundum-structure gallium oxide (α-Ga₂O₃), a material originating from Kyoto University in Japan, using its proprietary water-based "MISTEPITAXY" mist deposition process to achieve lower loss than SiC at silicon-level cost. It targets applications starting with small power supplies and expanding to industrial equipment, power infrastructure, and mobility including electric vehicles.
Founders & leadership
株式会社FLOSFIA was founded in 2011 by 人羅俊実.

Investors · 4
How we know: the VCSheet dataset · Not right? Tell us
How we know: Kyoto University Innovation Capital's portfolio page · Not right? Tell us
How we know: UTEC's portfolio page · Not right? Tell us
Frequently asked questions
- What does 株式会社FLOSFIA do?
- FLOSFIA develops power semiconductor devices based on corundum-structure gallium oxide (α-Ga₂O₃), a material originating from Kyoto University in Japan, using its proprietary water-based "MISTEPITAXY" mist deposition process to achieve lower loss than SiC at silicon-level cost. It targets applications starting with small power supplies and expanding to industrial equipment, power infrastructure, and mobility including electric vehicles.
- Who founded 株式会社FLOSFIA?
- 株式会社FLOSFIA was founded by 人羅俊実 in 2011.
- Who are 株式会社FLOSFIA's investors?
- 株式会社FLOSFIA's investors include Energy & Environment Investment, Kyoto University Innovation Capital, Miyako Capital, UTEC.
- Where is 株式会社FLOSFIA headquartered?
- 株式会社FLOSFIA is headquartered in Kyoto, JP.

